为哈尔滨工业大学设计的ACS Appl. Electr.Mater.杂志封面，Tin disulfide (SnS2) has a larger band gap (>2.0 eV) than other two-dimensional (2D) materials, which can achieve a higher on/off current ratio, a much lower off-current, and standby power dissipation in future electronics. However, the defects in SnS2, such as sulfur vacancies, always result in very low carrier mobility and on/off current ratio, which are far behind their theoretical values. Herein, we report a synergistic effect of vacancy repairing and electron doping on SnS2 sheets introduced by ethylenediaminetetraacetic acid (EDTA) molecules decoration, which improves the electrical performance of FETs devices.
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